unisonic technologies co., ltd ut23p09 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-844.a -23 a , -100v p-channel power mosfet ? description the utc ut23p09 is a p-channel power mosfet, it uses utc?s advanced technology to pr ovide the customers with high switching speed and a minimum on-state resistance. the utc ut23p09 is suitable for all commercial-industrial applications, etc. ? features * r ds(on) <0.117 ? @ v gs =-10v, i d =-11a * high switching speed * dynamic dv/dt rating ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UT23P09L-TA3-T ut23p09g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
ut23p09 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-844.a ? absolute maximum rating parameter symbol ratings unit drain-source voltage v dss -100 v gate-source voltage v gss 20 v drain current continuous v gs =-10v, t c =25c i d -23 a v gs =-10v, t c =100c -16 a pulsed (note 2) i dm -76 a avalanche current (note 2) i ar -11 a avalanche energy single pulse (note 3) e as 430 mj repetitive (note 2) e ar 14 mj peak diode recovery dv/dt (note 4) dv/dt -5.0 v/ns power dissipation (t c =25c) p d 140 w linear derating factor 0.91 w/c junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating; pulse width limi ted by max. junction temperature. 3. starting t j =25c, l=7.1mh, r g =25 ? , i as =-11a. 4. i sd -11a, di/dt -470a/s, v dd bv dss , t j 150c. ? thermal resistance parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 1.1 c/w
ut23p09 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-844.a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -100 v breakdown voltage temperature coefficient ? bv dss / ? t j reference to 25c, i d =-1ma -0.11 v/c drain-source leakage current i dss v ds =-100v, v gs =0v -25 a v ds =-80v, v gs =0v, t j =150c -250 a gate-source leakage current forward i gss v gs =20v, v ds =0v 100 na reverse v gs =-20v, v ds =0v -100 na on characteristics static drain-source on-resistance r ds ( on ) v gs =-10v, i d =-11a (note 5) 0.117 ? gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -2.0 -4.0 v dynamic parameters input capacitance c iss v gs =0v, v ds =-25v, f=1.0mhz 1300 pf output capacitance c oss 400 pf reverse transfer capacitance c rss 240 pf switching parameters total gate charge q g i d =-11a, v ds =-80v, v gs =-10v, (note 5) 97 nc gate-to-source charge q gs 15 nc gate-to-drain ("miller") charge q gd 51 nc turn-on delay time t d ( on ) v dd =-50v, i d =-11a, r g =5.1 ? r d =4.2 ? , (note 5) 15 ns rise time t r 67 ns turn-off delay time t d ( off ) 51 ns fall time t f 51 ns source- drain diode ratings and characteristics maximum body diode continuous source current i s -23 a maximum body-diode pulsed current (note 2) i sm -76 a drain-source diode forward voltage v sd t j =25c, i s =-11a, v gs =0v (note 5) -1.6 v body diode reverse recovery time t rr t j =25c, i f =-11a, di/dt=-100a/s (note 5) 150 220 ns body diode reverse recovery charge q rr 830 1200 nc note: 5. pulse width 300s; duty cycle 2%.
ut23p09 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-844.a ? test circuits and waveforms
ut23p09 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-844.a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
ut23p09 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-844.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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